 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| GP1S32 GP1S32 s Features 1. Ultra-compact package 2. PWB mounting type 3. High sensing accuracy ( Slit width : 0.3mm ) 4. High speed response Subminiature Photointerrupter s Outline Dimensions 4 1 1 Anode 2 Collector 4.2 4.2 (0.3) Slit width (1.0) + 0.2 1.15 1.6 - 0.1 Center of light path ( Unit : mm ) 3 2 3 Emitter 4 Cathode Internal connection diagram s Applications 1. Floppy disk drives (C0.8) 3.5 (1.0) 4 - 0.15+ - 0.2 0.1 4 - 0.5 g3.2 g2.5 1 2 4 3 * Tolerance : 0.2mm * Burr's dimensions: 0.15MAX. * Rest of gate : 0.3MAX. * ( ): Reference dimensions * The dimensions indicated by g refer to those measured from the lead base. s Absolute Maximum Ratings Parameter Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol IF VR P VCEO VECO IC PC Ptot Topr Tstg Tsol ( Ta = 25C ) Rating 50 6 75 35 6 20 75 100 - 25 to + 85 - 40 to + 100 260 Unit mA V mW V V mA mW mW C C C Input 4.0MIN. Soldering area 0.6mm or more Rest of gate Output *1 For 5 seconds " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device." 5.2 GP1S32 s Electro-optical Characteristics Input Output Transfer characteristics Parameter Forward voltage Reverse current Collector dark current Collector current Collector-emitter saturation voltage Rise time Response time Fall time Symbol VF IR ICEO IC V CE(sat) tr tf Condition IF = 20mA VR = 3V VCE = 20V VCE = 5V, I F = 5mA IF = 10mA, I C = 50 A VCE = 5V, I C = 100 A RL = 1 000 MIN. 50 TYP. 1.2 35 35 ( Ta = 25C ) MAX. 1.4 10 100 300 0.4 100 100 Unit V A nA A V s s Fig. 1 Forward Current vs. Ambient Temperature 60 Fig. 2 Power Dissipation vs. Ambient Temperature 120 P tot 50 Forward current I F ( mA ) Power dissipation P ( mW ) 100 40 80 P, P c 30 60 20 40 10 0 - 25 20 0 - 25 0 25 50 75 85 100 0 25 50 75 85 100 Ambient temperature T a ( C ) Ambient temperature T a ( C ) Fig. 3 Forward Current vs. Forward Voltage 500 200 Forward current I F ( mA ) 100 50 20 10 5 T a = 75C 50C 25C 0C - 25C Fig. 4 Collector Current vs. Forward Current 1.0 Collector current I C ( mA ) VCE = 5V T a = 25C 0.8 0.6 0.4 0.2 2 1 0 0.5 1 1.5 2 2.5 3 Forward voltage VF ( V ) 0 0 10 Forward current I F ( mA ) 20 GP1S32 Fig. 5 Collector Current vs. Collector-emitter Voltage 2.0 Collector current I C ( mA ) 1.8 1.6 1.4 1.2 30mA 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 Collector-emitter voltage V CE ( V ) 10mA 5mA 0 - 25 0 25 50 75 85 20mA Collector current I C ( A) I F = 50mA 40mA 150 T a = 25C Fig. 6 Collector Current vs. Ambient Temperature 200 100 50 Ambient temperature T a ( C ) Fig. 7 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.16 Collector-emitter saturation voltage VCE(sat) ( V ) Fig. 8 Collector Dark Current vs. Ambient Temperature 10 - 6 5 V CE = 20V Collector dark current I CEO ( A) 2 0.14 10 - 7 5 2 0.12 10 - 8 5 2 0.10 I F = 10mA I C = 50 A 0.08 10 - 9 5 2 - 25 0 25 50 75 85 10 - 10 0 25 50 75 100 Ambient temperature Ta ( C ) Ambient temperature T a ( C ) Fig. 9 Response Time vs. Load Resistance VCE = 5V I C = 100 A T a = 25C tr tf Test Circuit for Response Time 100 Response time ( s ) 50 td Input 10 5 ts RD VCC RL Output Input Output 10% 90% td tr 1 0.5 1 5 10 50 ts tf Load resistance R L ( k ) GP1S32 Fig.10 Relative Collector Current vs. Shield Distance ( 1 ) L= 0 Relative collector current ( % ) Relative collector current ( % ) 100 90 80 70 60 50 40 30 20 10 1 2 3 I F = 5mA VCE = 5V T a = 25C Shield + L 100 90 80 70 60 50 40 30 20 10 1 2 3 L I F = 5mA VCE = 5V T a = 25C Shield distance L ( mm ) + Fig.11 Relative Collector Current vs. Shield Distance ( 2 ) Shield L= 0 Shield distance L ( mm ) q Please refer to the chapter " Precautions for Use" . |
Price & Availability of GP1S32
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |